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IRLL2705PBF N-Channel MOSFET, 55V drain-source voltage, 3.8A continuous drain current, 40mOhm on-resistance at 10V gate drive. Surface mount package SOT-223.
Mfr Part #:

IRLL2705PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 55V drain-source voltage, 3.8A continuous drain current, 40mOhm on-resistance at 10V gate drive. Surface mount package SOT-223.
✓ Total Stock: 5,000 pcs

IRLL2705PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
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IRLL2705PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRLL2705PBF Description

Short technical summary and product information.

The IRLL2705PBF is an N-Channel enhancement mode MOSFET from Infineon Technologies. It features a drain-source voltage rating of 55V and a continuous drain current of 3.8A at ambient temperature. The device has a maximum on-resistance of 40mOhm at a gate drive of 10V and 3.8A drain current. The gate threshold voltage is 2V maximum at 250µA drain current. The MOSFET is designed for low-voltage switching applications requiring efficient power management. It is housed in a surface mount SOT-223 package (TO-261-4, TO-261AA) and supports an operating junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and REACH unaffected (unverified).

IRLL2705PBF Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRLL2705PBF N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

IRLL2705PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLL2705PBF Features

  • N-Channel MOSFET with 55V drain-source voltage.
  • Continuous drain current of 3.8A at ambient temperature.
  • Low on-resistance of 40mOhm at 10V gate drive.
  • Surface mount SOT-223 package for compact designs.
  • Wide operating temperature range from -55°C to 150°C.

IRLL2705PBF Applications

  • Used in low-voltage power switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for load switching in portable devices.
  • Applicable in motor control and power management.

IRLL2705PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRLL2705PBF?

55V.

What is the continuous drain current of the IRLL2705PBF?

3.8A at ambient temperature.

What is the on-resistance of the IRLL2705PBF?

40mOhm maximum at Vgs=10V and Id=3.8A.

What is the operating temperature range of the IRLL2705PBF?

-55°C to 150°C (junction).

What package is the IRLL2705PBF available in?

Surface mount SOT-223 (TO-261-4, TO-261AA).

Is the IRLL2705PBF RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage of the IRLL2705PBF?

2V maximum at Id=250µA.

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