| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,800 pcs
|
2800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLL110PBF is a third-generation Power MOSFET from Vishay Siliconix, designed for fast switching, rugged operation, and low on-resistance. It is an N-Channel device with a maximum drain-source voltage of 100V and continuous drain current of 1.5A at 25°C (0.93A at 100°C). The on-resistance is typically 540 mΩ at 5V gate drive, making it efficient for low-voltage gate drive circuits. The logic-level gate drive (4V, 5V) allows direct interface with 3.3V or 5V logic.
This MOSFET is housed in a surface-mount SOT-223 package (TO-261-4), which features an enlarged tab for improved thermal performance. It supports a maximum power dissipation of 3.1W at case temperature 25°C and 2.0W when PCB-mounted. The operating junction temperature range is -55°C to 150°C. The device also includes avalanche energy ratings: 50 mJ single pulse and 0.31 mJ repetitive, ensuring robustness in inductive switching applications.
Key electrical characteristics include a maximum gate threshold voltage of 2V at 250µA, total gate charge of 6.1 nC at 5V, and input capacitance of 250 pF at 25V drain-source voltage. The peak diode recovery dv/dt is 5.5 V/ns. The IRLL110PBF is lead-free and available in tape and reel packaging options.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The continuous drain current is 1.5 A at Tc=25°C and 0.93 A at Tc=100°C.
The maximum on-resistance is 540 mΩ at Id=900 mA, Vgs=5 V.
The operating junction temperature range is -55°C to 150°C.
The package is SOT-223 (TO-261-4).
It is listed as RoHS3 Compliant, but this is unverified.
The maximum gate threshold voltage is 2 V at Id=250 µA.