Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	3.1A (Ta)
Drain to Source Voltage (Vdss)	55 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2V @ 250µA

IRLL024NPBF-INF

IRLL024NPBF-INF Specifications Quick View