| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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109 pcs
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109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from Infineon Technologies, part number IRLL014NTRPBF, is designed for various electronic applications. It features a maximum drain-source voltage of 55V and a continuous drain current of 2A at 25°C.
The MOSFET operates with a gate drive voltage range of 4V to 10V, and its on-resistance is specified as a maximum of 140mOhm at 2A and 10V. The gate threshold voltage is typically 2V at 250µA, and the gate charge is a maximum of 14nC at 10V. The maximum gate-source voltage is ±16V.
Packaged in a SOT-223 surface mount case, this component is suitable for applications requiring compact designs. The power dissipation is rated at 1W. The HEXFET® series designation indicates its advanced technology.
Key electrical characteristics include an input capacitance of 230pF at 25V. The component is specified with RoHS3 compliance and an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 55V.
The continuous drain current is 2A at 25°C.
The maximum on-resistance is 140mOhm at 2A and 10V.
The gate threshold voltage is 2V at 250µA.
The package type is SOT-223.
The mounting type is Surface Mount.