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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 220 | On Request | On Request |
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The Infineon IRLI540NPBF is a fifth-generation HEXFET Power MOSFET utilizing advanced processing techniques for high efficiency and reliability. This N-channel MOSFET offers a continuous drain current of 23A at 25°C and a breakdown voltage of 100V.
Key electrical characteristics include a low static drain-to-source on-resistance of 0.044Ω at a gate-to-source voltage of 10V and a gate threshold voltage of 1.0V. The device is rated for a gate-to-source voltage of ±16V and has a maximum power dissipation of 54W at 25°C.
Packaged in a TO-220 Full-Pak, the IRLI540NPBF is suitable for commercial and industrial applications. The isolated package provides high isolation capability and a low thermal resistance. It is mounted to a heat sink using a single clip or screw fixing. The operating junction and storage temperature range is -55°C to +175°C.
This MOSFET is fully avalanche rated and features logic-level gate drive, advanced process technology, and lead-free construction.
The drain-to-source breakdown voltage is 100V.
The static drain-to-source on-resistance is 0.044Ω at VGS = 10V and ID = 12A.
The continuous drain current is 23A at 25°C with a gate-to-source voltage of 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a TO-220 Full-Pak package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.