| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,777 pcs
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8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLI520NPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 100V and a continuous drain current of 8.1A at 25°C case temperature. The device offers a low on-resistance of 180mΩ maximum at VGS=10V, making it suitable for efficient switching applications. The gate threshold voltage ranges from 1V to 2V, allowing logic-level drive. The MOSFET is fully avalanche rated with a single pulse avalanche energy of 85mJ. It is housed in a TO-220 Full-Pak package, which provides high isolation voltage of 2.5kV between sink and leads, eliminating the need for additional insulating hardware. The package is through-hole mountable and comes in tube packaging with 50 units per tube. The operating junction temperature range is -55°C to 175°C. This device is lead-free and RoHS compliant. Typical applications include power supplies, motor control, and DC-DC converters.
100V minimum at VGS=0V, ID=250µA.
8.1A at TC=25°C with VGS=10V; 5.7A at TC=100°C.
180mΩ maximum at VGS=10V, ID=6.0A; 220mΩ at VGS=5V; 260mΩ at VGS=4V.
1V to 2V at VDS=VGS, ID=250µA.
-55°C to 175°C junction temperature.
TO-220-3 Full Pack (TO-220AB Full-Pak), through-hole mounting.
Yes, RoHS3 Compliant (unverified).