| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,080 pcs
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10080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRLI2910PBF from VBsemi is a Fifth Generation HEXFET Power MOSFET designed for efficiency and reliability. It offers a high continuous drain current of 31A at 25°C and a low static drain-to-source on-resistance as low as 0.026 Ohms at VGS = 10V, ID = 16A.
This MOSFET boasts a drain-to-source breakdown voltage of 100V and a gate-to-source voltage range of ±16V. It is rated for a maximum power dissipation of 63W at 25°C and operates within a junction and storage temperature range of -55°C to +175°C.
The TO-220 Full Pak package provides high isolation capability and a low thermal resistance, suitable for commercial-industrial applications. It is mounted using a single clip or screw fixing. The device is fully avalanche rated and lead-free.
Key electrical characteristics include a gate threshold voltage between 1.0V and 2.0V and a forward transconductance of 28S minimum. The part also features high voltage isolation of 2500V RMS and a sink-to-lead creepage distance of 4.8mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 31A at 25°C case temperature and 22A at 100°C case temperature.
The drain-to-source breakdown voltage is 100V.
The typical static drain-to-source on-resistance is 0.026 Ohms at VGS = 10V and ID = 16A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRLI2910PBF is supplied in a TO-220 Full-Pak package.