| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The IRLHM620TRPBF from Vishay Dale is a HEXFET® Power MOSFET in a PQFN 3.3 x 3.3 mm package. This N-channel MOSFET is designed for applications such as battery-operated DC motor inverters and secondary side synchronous rectification.
Key electrical characteristics include a maximum drain-to-source voltage (Vds) of 20V and a low on-resistance (RDS(on)) of 2.5 mOhm at a gate-source voltage (Vgs) of 4.5V. It offers a continuous drain current (Id) of up to 40A at a case temperature of 25°C. The device also features a typical total gate charge (Qg) of 52 nC.
With a low profile of less than 1.0 mm, this MOSFET enables increased power density. It is compatible with existing surface mount techniques, facilitating easier manufacturing. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The typical on-resistance is 2.5 mOhm.
The continuous drain current rating is 40A.
The IRLHM620TRPBF is supplied in a PQFN 3.3mm x 3.3mm package.
The standard package quantity is 4000 units.
The operating junction and storage temperature range is -55°C to +150°C.