| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,600 pcs
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21600 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon IRLHM620TRPBF is a HEXFET Power MOSFET designed for applications requiring efficient power switching. It offers a low Drain-to-Source On-Resistance (RDS(on)) of typically 2.5mΩ at VGS = 4.5V, which minimizes conduction losses. The device supports a continuous drain current of up to 40A at a case temperature of 25°C.
With a Drain-to-Source Voltage (VDS) of 20V and a Gate-to-Source Voltage (VGS) of ±12V, this N-channel MOSFET is suitable for various power management tasks. Its low profile (under 1.0mm) and low thermal resistance to the PCB contribute to increased power density and improved thermal dissipation in designs.
The IRLHM620TRPBF is packaged in a PQFN 3.3x3.3mm surface-mount package, supplied on tape and reel for automated manufacturing processes. It is designed for applications such as battery-operated DC motor inverters and secondary side synchronous rectification MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 40A at a case temperature of 25°C.
The Drain-to-Source Breakdown Voltage is 20V.
The typical Gate Threshold Voltage is 0.8V.
It is supplied in a PQFN 3.3mm x 3.3mm package.
It is supplied on tape and reel with a standard pack quantity of 4000 units.
The operating junction and storage temperature range is -55°C to +150°C.