| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
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The Infineon IRLF120 is a high-reliability N-channel power MOSFET from the HEXFET Logic Level series. It is designed for operation with a 5V gate-to-source voltage, making it suitable for interfacing power loads with logic-level ICs and microprocessors.
Key electrical characteristics include a drain-to-source breakdown voltage of 100V and a low static drain-to-source on-resistance of 0.35Ω at a gate-to-source voltage of 5.0V. It offers a continuous drain current of 5.3A at 25°C and 3.4A at 100°C. The device also features repetitive avalanche ratings and dynamic dv/dt rating.
This MOSFET is housed in a TO-39 package and is suitable for high-speed power applications such as switching regulators, switching converters, motor drivers, and solenoid/relay drivers. Its hermetically sealed construction and excellent temperature stability contribute to its reliability in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) is 100V.
The typical static drain-to-source on-resistance (RDS(on)) is 0.35Ω at VGS = 5.0V and 3.4A.
The continuous drain current (ID) is 5.3A at 25°C and 3.4A at 100°C, both with VGS = 5.0V.
The gate threshold voltage (VGS(th)) ranges from 1.0V to 2.0V.
The IRLF120 is supplied in a TO-39 package.
The operating junction and storage temperature range is -55°C to +150°C.