IRLD120 N-Channel MOSFET, 100V drain-source voltage, 1.3A continuous drain current, 270mΩ on-resistance at 5V gate drive, in a 4-DIP through-hole package.
Mfr Part #:

IRLD120

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET, 100V drain-source voltage, 1.3A continuous drain current, 270mΩ on-resistance at 5V gate drive, in a 4-DIP through-hole package.
✓ Total Stock: 4,022 pcs

IRLD120 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
22 pcs
22 pcs On Request 1 On Request On Request On Request On Request On Request

IRLD120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLD120 Description

Short technical summary and product information.

The IRLD120 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for low-power switching applications. It features a drain-source voltage of 100V and a continuous drain current of 1.3A at 25°C. The device offers a maximum on-resistance of 270mΩ at a gate drive of 5V, making it suitable for logic-level operation. Key characteristics include a gate threshold voltage of 2V maximum, total gate charge of 12nC, and input capacitance of 490pF. The MOSFET is rated for repetitive avalanche energy and features a dynamic dV/dt rating. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 1.3W at 25°C ambient. The device is housed in a 4-DIP (0.300", 7.62mm) through-hole package with a dual drain for thermal dissipation, and is stackable on standard 0.1" pin centers.

IRLD120 Quick Information

Product Type: Power MOSFET
Canonical Name: IRLD120 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRLD120 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IRLD120 Features

  • N-Channel power MOSFET with 100V drain-source voltage.
  • Logic-level gate drive for 4V and 5V operation.
  • Low on-resistance of 270mΩ at 5V gate drive.
  • Through-hole 4-DIP package for easy insertion.
  • Operating temperature range -55°C to 175°C.

IRLD120 Applications

  • Suitable for low-power DC-DC converters.
  • Used in load switching applications.
  • Ideal for battery-powered circuits.
  • Applicable in motor control circuits.

IRLD120 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRLD120?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) is 1.3A at Tc=25°C.

What is the on-resistance of the IRLD120?

The maximum on-resistance (Rds on) is 270mΩ at Id=780mA and Vgs=5V.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package does the IRLD120 come in?

The device is available in a 4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP.

Is the IRLD120 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and low confidence.

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