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IRLD110PBF IRLD110PBF is a 100V, 1A N-Channel Power MOSFET. It features a logic-level gate drive and is housed in a through-hole 4-DIP (HVMDIP) package.
Mfr Part #:

IRLD110PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
IRLD110PBF is a 100V, 1A N-Channel Power MOSFET. It features a logic-level gate drive and is housed in a through-hole 4-DIP (HVMDIP) package.
✓ Total Stock: 1,514 pcs
$ Price Range: $1.08 - $2.45

IRLD110PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
1,414 pcs
On Request
1414 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRLD110PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRLD110PBF Description

Short technical summary and product information.

The IRLD110PBF is a third-generation N-Channel Power MOSFET from Vishay Siliconix (manufacturer reported as Vishay Dale). It is designed for high-speed switching and low on-resistance, with a drain-source voltage rating of 100V and continuous drain current of 1A.

 

Key electrical characteristics include a maximum on-resistance of 540 mOhm at 5V gate drive, logic-level gate drive capability (4V, 5V), total gate charge of 6.1 nC, and input capacitance of 250 pF. The device is capable of repetitive avalanche and dynamic dV/dt rating, making it suitable for rugged applications.

 

Housed in a through-hole 4-DIP (HVMDIP) package, the device offers a maximum power dissipation of 1.3W and operates over a junction temperature range of -55°C to 175°C. The dual drain serves as a thermal link to the mounting surface.

IRLD110PBF Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET, 100V, 1A, 4-DIP (HVMDIP)
Subcategory: N-Channel MOSFET

IRLD110PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRLD110PBF Estimated Pricing

Qty Low High
1+ $2.45 $2.45
10+ $1.58 $1.58
100+ $1.08 $1.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRLD110PBF Features

  • N-Channel Power MOSFET, 100V, 1A.
  • Logic-level gate drive capability.
  • Low on-resistance of 540 mOhm.
  • Through-hole 4-DIP (HVMDIP) package.
  • Operating temperature up to 175°C.

IRLD110PBF Applications

  • Suitable for automatic insertion assembly.
  • Can be stacked on standard 0.1" pin centers.
  • Ideal for high-speed switching circuits.
  • Used in rugged industrial applications.

IRLD110PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRLD110PBF?

100V.

What is the package type of the IRLD110PBF?

4-DIP (0.300", 7.62mm) with HVMDIP supplier device package.

What is the operating temperature range of the IRLD110PBF?

-55°C to 175°C (junction temperature).

Is the IRLD110PBF RoHS compliant?

The device is reported as RoHS3 compliant, but this status is unverified.

What is the maximum on-resistance?

540 mOhm at 600 mA, 5V.

What is the gate charge?

6.1 nC at 5V.

What is the mounting type?

Through hole.

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