IRLD024PBF N-Channel power MOSFET with 60V drain-source voltage and 2.5A continuous drain current. Features logic-level gate drive and low on-resistance of 100mΩ at 5V.
Mfr Part #:

IRLD024PBF

Available from 3 distributors
Mfr Name: Vishay
Vishay
N-Channel power MOSFET with 60V drain-source voltage and 2.5A continuous drain current. Features logic-level gate drive and low on-resistance of 100mΩ at 5V.
✓ Total Stock: 5,805 pcs

IRLD024PBF Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,120 pcs
2120 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
85 pcs
85 pcs On Request 1 On Request On Request 06+47 On Request On Request

IRLD024PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLD024PBF Description

Short technical summary and product information.

The IRLD024PBF is an N-Channel power MOSFET from Vishay, designed for logic-level gate drive with specified on-resistance at 4V and 5V gate voltages. It features a maximum drain-source voltage of 60V and continuous drain current of 2.5A at 25°C ambient temperature. The device offers fast switching performance with a total gate charge of 18 nC and typical input capacitance of 870 pF. The MOSFET is housed in a 4-pin HVMDIP (4-DIP) package with through-hole mounting, suitable for automatic insertion and stackable on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface, enabling power dissipation up to 1.3W. With an operating junction temperature range of -55°C to 175°C, it is suitable for a variety of power management and switching applications. The part is RoHS3 compliant and has an MSL of 1 (unlimited).

IRLD024PBF Quick Information

Product Type: Power MOSFET
Series: IRLD024
Canonical Name: IRLD024PBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRLD024PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRLD024PBF Features

  • Logic-level gate drive with 4V and 5V operation.
  • Low on-resistance of 100mΩ at 5V gate drive.
  • Fast switching with 18 nC total gate charge.
  • 175°C maximum junction temperature.
  • Through-hole 4-DIP package for automatic insertion.

IRLD024PBF Applications

  • Used in low-voltage power management circuits.
  • Ideal for DC-DC converter switching stages.
  • Suitable for motor control and driver applications.
  • Applicable in load switching and power distribution.

IRLD024PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V maximum.

What is the continuous drain current?

2.5A at 25°C ambient, 1.8A at 100°C ambient.

What is the on-resistance?

100mΩ maximum at Vgs=5V, Id=1.5A; 140mΩ maximum at Vgs=4V, Id=1.3A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is it available in?

4-DIP (0.300", 7.62mm) / 4-HVMDIP, through-hole mounting.

Is it RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate charge?

Total gate charge 18 nC at Vgs=5V, with typical gate-source charge 4.5 nC and gate-drain charge 12 nC.

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