LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The Vishay IRLD014 is a third-generation N-Channel Power MOSFET offering a balance of fast switching, rugged design, and low on-resistance. It is suitable for applications requiring efficient power management.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a low on-state resistance of 0.20 Ω at a gate-source voltage of 5V. The device is specified with a gate-source threshold voltage between 1.0V and 2.0V. It supports a continuous drain current of up to 1.7A at 25°C.
Designed for versatility, the IRLD014 features a logic-level gate drive, making it compatible with lower voltage control signals. It also boasts a dynamic dV/dt rating and a high operating junction temperature of 175°C, ensuring reliability in demanding environments.
The component is housed in a 4-pin HVMDIP package, which is machine-insertable and can be stacked. The dual drain serves as a thermal link for power dissipation up to 1.3W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical on-state resistance is 0.20 Ohms at VGS = 5V and ID = 1.0A.
The maximum operating junction and storage temperature is 175°C.
The IRLD014 is available in a HVMDIP package.
The continuous drain current rating is 1.7A at 25°C.
