IRLB8721PBF N-Channel MOSFET with 30V drain-source voltage rating, 62A continuous drain current, and low on-resistance of 8.7mΩ at 10V. Housed in a TO-220AB through-hole package.
Mfr Part #:

IRLB8721PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 30V drain-source voltage rating, 62A continuous drain current, and low on-resistance of 8.7mΩ at 10V. Housed in a TO-220AB through-hole package.
✓ Total Stock: 3,120 pcs

IRLB8721PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,120 pcs
1120 pcs On Request 1 On Request On Request On Request On Request On Request

IRLB8721PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRLB8721PBF Description

Short technical summary and product information.

The IRLB8721PBF is an N-Channel Power MOSFET from Infineon Technologies, designed for applications requiring high efficiency and low switching losses. It features a drain-to-source breakdown voltage of 30V and a continuous drain current of 62A at 25°C case temperature. The device offers very low on-resistance: typically 6.5mΩ at 10V gate drive and 13.1mΩ at 4.5V, making it suitable for low-voltage high-current switching. The gate threshold voltage ranges from 1.35V to 2.35V, and the total gate charge is typically 7.6nC at 4.5V, enabling fast switching. Switching speeds are characterized by a 9.1ns turn-on delay and 93ns rise time, with 9.0ns turn-off delay and 17ns fall time.

 

The MOSFET is packaged in a through-hole TO-220-3 (TO-220AB) case, allowing easy mounting on heatsinks for thermal management. The operating junction temperature range is -55°C to 175°C. The device is lead-free and listed as RoHS3 compliant. Key dynamic parameters include input capacitance of 1077 pF at 15V and gate resistance of 2.3Ω typical. Designed for inverter, UPS, and synchronous buck converter applications, the IRLB8721PBF combines low gate charge with fast switching for high-frequency operation.

IRLB8721PBF Quick Information

Product Type: MOSFET
Series: IRLB8721
Canonical Name: Infineon Technologies IRLB8721PBF MOSFET N-Channel 30V 62A TO-220AB
Subcategory: Single MOSFET

IRLB8721PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRLB8721PBF Features

  • 30V drain-to-source voltage rating.
  • 62A continuous drain current at 25°C.
  • Low on-resistance of 8.7mΩ max at 10V.
  • Fast switching with 93ns rise time.
  • Lead-Free construction per datasheet.

IRLB8721PBF Applications

  • Used in UPS/inverter power stages.
  • Ideal for synchronous buck converters.
  • Suitable for high-frequency DC-DC converters.
  • Applicable in telecom and industrial power supplies.

IRLB8721PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRLB8721PBF?

30V maximum.

What is the continuous drain current at 25°C?

62A.

What is the typical on-resistance at 10V gate drive?

6.5mΩ typical, 8.7mΩ maximum.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the IRLB8721PBF available in?

TO-220-3 (TO-220AB) through-hole package.

Is the IRLB8721PBF RoHS compliant?

Listed as RoHS3 Compliant but unverified (low confidence).

What is the total gate charge?

Typical 7.6nC, maximum 13nC at Vgs=4.5V, Vds=15V, Id=25A.

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