| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLB8314PBF is a HEXFET Power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 171A (silicon limited at 25°C) or 130A (package limited). The device offers very low on-resistance: 2.4 mΩ maximum at VGS=10V and 3.2 mΩ maximum at VGS=4.5V, enabling reduced conduction losses.
This MOSFET is optimized for UPS/inverter and low-voltage power tool applications. It provides fully characterized avalanche voltage and current, with a typical total gate charge of 40 nC at VDS=15V and VGS=4.5V, supporting fast switching. The device is rated for an operating junction temperature range of -55°C to 175°C and has a maximum power dissipation of 125W at TC=25°C.
The IRLB8314PBF is housed in a through-hole TO-220-3 package (supplier device package TO-220-3) and is supplied in tubes with a standard pack quantity of 50. The package is designed for easy mounting with a maximum torque of 10 lbf·in. The device is lead-free and RoHS compliant as per the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.45 | $2.45 |
| 10+ | $1.20 | $1.20 |
| 100+ | $1.07 | $1.07 |
| 500+ | $0.86 | $0.86 |
| 1,000+ | $0.76 | $0.76 |
| 2,000+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-220-3 (through-hole).
-55°C to 175°C (junction temperature).
Yes, the datasheet states it is Lead-Free and RoHS Compliant.
30V.
171A at TC=25°C (silicon limited), 130A package limited.
1.9 mΩ at VGS=10V, ID=68A.
40 nC typical at VDS=15V, VGS=4.5V, ID=68A.