| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLB4030PBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current rating of 180A at 25°C case temperature. The device offers a typical on-resistance of 3.4mOhm and a maximum of 4.3mOhm at 10V gate drive, enabling low conduction losses.
Gate drive voltage is optimized for both 4.5V and 10V logic levels, making it suitable for logic-level drive circuits. The MOSFET has a maximum gate charge of 130nC at 4.5V and input capacitance of 11360pF at 50V drain-source voltage. It is housed in a standard TO-220-3 package (TO-220AB) with through-hole mounting, providing good thermal performance with a junction-to-case thermal resistance of 0.40°C/W.
Designed for rugged operation, the device supports a junction temperature range of -55°C to 175°C and can dissipate up to 370W at 25°C case temperature. Typical applications include DC motor drives, high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits. The part is lead-free as per the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.20 | $5.20 |
| 10+ | $3.45 | $3.45 |
| 100+ | $2.45 | $2.45 |
| 500+ | $2.03 | $2.03 |
| 1,000+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V (minimum).
The device is available in a TO-220-3 package (TO-220AB).
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant and lead-free, though RoHS status is unverified (low confidence).
The maximum continuous drain current is 180A at Tc=25°C and 130A at Tc=100°C.
The maximum drain-source on-resistance is 4.3mOhm at Vgs=10V, Id=110A; typical is 3.4mOhm.
The gate threshold voltage ranges from 1.0V to 2.5V at Id=250µA.