| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLB3036PBF is a 60V N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It features a very low typical on-resistance of 1.9mΩ (max 2.4mΩ at 165A, 10V), enabling high current handling with minimal conduction losses. The device is optimized for logic-level gate drive (4.5V) and offers a continuous drain current of 195A (package limited) or 270A (silicon limited) at 25°C case temperature. With a maximum power dissipation of 380W and a junction temperature range of -55°C to 175°C, it is suitable for demanding power conversion systems. The IRLB3036PBF is housed in a through-hole TO-220AB package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.40°C/W. It is lead-free and RoHS compliant. Typical applications include DC motor drives, high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.91 | $3.91 |
| 10+ | $2.47 | $2.47 |
| 100+ | $1.80 | $1.80 |
| 1,000+ | $1.32 | $1.32 |
| 2,000+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-220-3 (TO-220AB).
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
1.9mΩ typical, 2.4mΩ maximum at Vgs=10V.
140nC maximum at Vgs=4.5V.
195A (package limited) or 270A (silicon limited) at Tc=25°C.