| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLB3034PBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications such as DC motor drives, synchronous rectification, and uninterruptible power supplies. The device features a drain-to-source voltage (Vdss) of 40V and a continuous drain current of 195A at 25°C case temperature. The maximum on-resistance is 1.7 mOhm at Vgs=10V and Id=195A, with a typical value of 1.4 mOhm. The gate threshold voltage is 2.5V maximum at Id=250µA. The device is logic-level gate drive capable with drive voltage of 4.5V and 10V. It is housed in a TO-220-3 through-hole package (TO-220AB) and supports a maximum power dissipation of 375W. The operating junction temperature range is -55°C to 175°C. The part is RoHS compliant (unverified) and has an MSL of 1 (unlimited).
40V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C junction temperature.
It is marked as RoHS3 compliant, but this is unverified.
195A continuous at 25°C case temperature.
1.7 mOhm maximum at Vgs=10V and Id=195A.
2.5V maximum at Id=250µA.