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3,570 pcs
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3570 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request | |
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936 pcs
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936 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Infineon IRL7833PBF is a HEXFET Power MOSFET with a Drain-to-Source Breakdown Voltage (BVDSS) of 30V. It features a low Static Drain-to-Source On-Resistance (RDS(on)) of 3.8mΩ at 4.5V VGS and 4.5mΩ at 10V VGS, making it suitable for efficient power conversion.
This MOSFET is characterized by its ultra-low gate impedance and a total gate charge (Qg) of 32nC at 10V VGS. It has a continuous drain current (ID) rating of 30A at 25°C and a maximum power dissipation (PD) of 140W at 25°C. The operating junction temperature range is -55°C to +175°C.
Applications include high frequency synchronous buck converters for computer processor power and high frequency isolated DC-DC converters with synchronous rectification for telecom and consumer use. The IRL7833PBF is available in a TO-220AB package and is lead-free.
Key electrical parameters include a gate threshold voltage (VGS(th)) of 1.4V. Thermal resistance from junction to case (RθJC) is 1.04°C/W, and junction-to-ambient (RθJA) for PCB mount is 40°C/W.
The minimum drain-source breakdown voltage is 30V at TJ=25°C.
The IRL7833PBF is packaged in a TO-220AB through-hole package.
The maximum operating junction temperature is 175°C.
The storage temperature range is -55°C to 175°C.
The maximum continuous drain current is 30A at TC=25°C with VGS=10V.
The typical gate threshold voltage is 1.4V at ID=250µA.
The maximum power dissipation is 140W at TC=25°C.