| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRL7833PBF is a HEXFET Power MOSFET. It is characterized by very low RDS(on) at 4.5V VGS and ultra-low gate impedance, making it suitable for high frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 30V and a maximum Static Drain-to-Source On-Resistance (RDS(on)) of 3.8mΩ at VGS = 10V, and 4.5mΩ at VGS = 4.5V. The Total Gate Charge (Qg) is typically 32nC. The continuous drain current (ID) is rated up to 30A at 25°C case temperature and 110A at 100°C case temperature.
This component is supplied in a TO-220AB package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +175°C. The device is lead-free and RoHS3 compliant.
Applications include high frequency synchronous buck converters for computer processor power and high frequency isolated DC-DC converters with synchronous rectification for telecom and consumer use.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (BVDSS) is 30V.
The Total Gate Charge (Qg) is typically 32nC.
The maximum Static Drain-to-Source On-Resistance (RDS(on)) is 3.8mΩ at VGS = 10V and 4.5mΩ at VGS = 4.5V.
The IRL7833PBF is supplied in a TO-220AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.