| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,328 pcs
|
3328 pcs | On Request | 1 | On Request | On Request | 2044+ | On Request | On Request | |
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL7486MTRPBF is an N-Channel MOSFET from Infineon's StrongIRFET family, designed for high-current, low-voltage applications. It features a drain-source voltage of 40V and a continuous drain current of 209A at 25°C (silicon limited). The device offers low typical on-resistance of 1.0 mΩ at Vgs=10V (1.25 mΩ max) and 1.5 mΩ typical at Vgs=4.5V (2.0 mΩ max), making it suitable for logic-level gate drive.
Key electrical characteristics include a gate threshold voltage of 2.5V max, input capacitance of 6904 pF at Vds=25V, and gate charge of 111 nC at Vgs=4.5V. The device is avalanche rated with a typical single-pulse avalanche energy of 111 mJ (tested) and a thermally limited maximum of 190 mJ. Thermal resistance is 1.2 °C/W junction-to-case, allowing efficient heat dissipation.
This MOSFET is packaged in a DirectFET Isometric ME surface-mount package, which provides low inductance and excellent thermal performance. It is supplied in tape and reel with 4800 pieces per reel. Applications include brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifiers, resonant mode power supplies, and DC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.05 | $3.05 |
| 10+ | $1.98 | $1.98 |
| 100+ | $1.36 | $1.36 |
| 500+ | $1.10 | $1.10 |
| 1,000+ | $1.05 | $1.05 |
| 2,500+ | $0.95 | $0.95 |
| 4,800+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40 V.
It is available in a DirectFET Isometric ME surface-mount package.
The operating junction temperature range is -55°C to 150°C.
RoHS compliance is indicated as RoHS3 Compliant but is unverified. The part number suffix 'PbF' suggests lead-free.
The maximum continuous drain current (silicon limited) at Tc=25°C is 209 A.
The typical on-resistance is 1.0 mΩ at Vgs=10V, Id=123A.
The maximum gate charge at Vgs=4.5V is 111 nC.