IRL640STRRPBF IRL640STRRPBF is a 200V, 17A N-Channel Power MOSFET from Vishay Dale. It features a low on-resistance of 180mΩ at 5V gate drive and is housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

IRL640STRRPBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
IRL640STRRPBF is a 200V, 17A N-Channel Power MOSFET from Vishay Dale. It features a low on-resistance of 180mΩ at 5V gate drive and is housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 13,820 pcs
$ Price Range: $1.60 - $4.30

IRL640STRRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,400 pcs
10400 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
3,420 pcs
3420 pcs On Request 1 On Request On Request On Request On Request On Request

IRL640STRRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRL640STRRPBF Description

Short technical summary and product information.

The IRL640STRRPBF is a third-generation N-Channel Power MOSFET designed for high-efficiency switching applications. It offers a drain-source voltage rating of 200V and a continuous drain current of 17A at 25°C case temperature. The device features a maximum on-resistance of 180mΩ at Vgs=5V and Id=10A, making it suitable for logic-level gate drive applications. Gate charge is 66nC maximum, with typical gate-source charge of 9.0nC and gate-drain charge of 38nC. The MOSFET is avalanche-rated with a single pulse avalanche energy of 580mJ. It is packaged in a D2PAK (TO-263) surface-mount package, which provides low internal resistance and high power dissipation capability up to 125W at case temperature. The operating junction temperature range is -55°C to 150°C. This device is ideal for power management circuits, DC-DC converters, and motor control applications where high efficiency and compact design are required.

IRL640STRRPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRL640STRRPBF N-Channel Power MOSFET 200V 17A D2PAK
Subcategory: N-Channel Power MOSFET

IRL640STRRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRL640STRRPBF Estimated Pricing

Qty Low High
1+ $4.30 $4.30
10+ $2.82 $2.82
100+ $1.94 $1.94
500+ $1.60 $1.60
800+ $1.60 $1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRL640STRRPBF Features

  • 200V drain-source voltage rating.
  • 17A continuous drain current at 25°C.
  • Low 180mΩ on-resistance at 5V gate drive.
  • Logic-level gate drive capability.
  • Surface-mount D2PAK (TO-263) package.

IRL640STRRPBF Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor control applications.
  • Suitable for power management systems.
  • Applicable in high-efficiency switching regulators.

IRL640STRRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

200V.

What is the continuous drain current?

17A at Tc=25°C, 11A at Tc=100°C.

What is the on-resistance?

180mΩ maximum at Vgs=5V, Id=10A.

What is the operating junction temperature range?

-55°C to 150°C.

What package is this MOSFET available in?

D2PAK (TO-263) surface-mount package.

Is this device RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified.

What is the gate charge?

66nC maximum at Vgs=5V.

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