| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL640STRLPBF is an N-Channel power MOSFET from Vishay Dale, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 17A at 25°C case temperature. The device offers a low on-resistance of 180mOhm at 10A and 5V gate drive, enabling reduced conduction losses. With logic-level gate drive capability, it can be driven directly from low-voltage logic circuits. The MOSFET also provides fast switching performance, making it suitable for high-frequency power converters. The device is housed in a surface-mount D2PAK (TO-263) package, which offers excellent power dissipation of up to 125W at case temperature. The operating junction temperature range is -55°C to 150°C. This MOSFET is avalanche rated with 580mJ single pulse energy, enhancing ruggedness in inductive switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.10 | $3.10 |
| 10+ | $2.31 | $2.31 |
| 100+ | $1.94 | $1.94 |
| 500+ | $1.51 | $1.51 |
| 800+ | $1.51 | $1.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
17A at Tc=25°C, 11A at Tc=100°C.
180mOhm maximum at Id=10A, Vgs=5V.
66nC maximum at Vgs=5V.
Surface-mount D2PAK (TO-263).
-55°C to 150°C junction temperature.
Yes, it is specified for Vgs=4V and 5V.