| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL640PBF is an N-Channel MOSFET manufactured by Vishay Dale. It is designed for switching and amplification applications requiring a drain-source breakdown voltage of 200V and continuous drain current of 17A. The device features a maximum on-resistance of 180mOhm at 10A gate drive of 5V, ensuring efficient power handling. With a gate charge of 66nC and input capacitance of 1800pF, it offers moderate switching performance suitable for medium-frequency circuits. The MOSFET is housed in a TO-220-3 through-hole package (TO-220AB), allowing easy mounting on PCBs or heatsinks. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 125W. This component is commonly used in power supplies, motor controls, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.35 | $3.35 |
| 10+ | $1.68 | $1.68 |
| 100+ | $1.51 | $1.51 |
| 500+ | $1.23 | $1.23 |
| 1,000+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 150°C (junction temperature).
It is listed as RoHS3 Compliant, but this is unverified.
Maximum 180mOhm at 10A, Vgs=5V.
66 nC at Vgs=5V.
1800 pF at Vds=25V.