| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL640A is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 18A at case temperature Tc. The device has a maximum power dissipation of 110W at Tc. With a typical gate threshold voltage of 2V and a gate drive voltage of 5V, it is suitable for logic-level gate drive applications.
This MOSFET exhibits a maximum drain-source on-resistance (Rds(on)) of 180 mOhm at a gate voltage of 5V and drain current of 9A. The gate charge (Qg) is 56 nC at Vgs=5V, and the input capacitance (Ciss) is 1705 pF at Vds=25V. These characteristics make it suitable for switching applications where low on-resistance and fast switching are required.
The device is housed in a TO-220-3 through-hole package, which is commonly used for power transistors and allows for easy mounting on a heatsink. The operating junction temperature range is -55°C to 150°C. The IRL640A is specified with a maximum gate-source voltage of ±20V.
The maximum drain-source voltage (Vdss) is 200V.
The IRL640A comes in a TO-220-3 through-hole package.
The junction operating temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
The maximum continuous drain current (Id) is 18A at Tc.
The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.
The maximum drain-source on-resistance (Rds(on)) is 180 mOhm at Vgs=5V and Id=9A.