| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRL6372TRPBF is a dual N-Channel MOSFET from Infineon Technologies, designed for efficient power management in space-constrained applications. It features a drain-to-source voltage rating of 30V and a continuous drain current of 8.1A at 25°C, with a maximum on-resistance of 17.9mΩ at 4.5V gate drive. The device is logic-level gate compatible, allowing direct drive from low-voltage logic circuits.
Key electrical characteristics include a gate threshold voltage range of 0.5V to 1.1V, total gate charge of 11nC, and input capacitance of 1020pF. The MOSFET is capable of handling pulsed drain currents up to 65A and operates over a junction temperature range of -55°C to 150°C.
The device is housed in an industry-standard SO-8 package (8-SOIC, 3.90mm width) with surface mount mounting. It is available in tape and reel packaging with a standard pack quantity of 4000 units. The IRL6372TRPBF is suitable for applications such as DC-DC converters, motor control, and load switching where dual MOSFETs in a compact footprint are required.
30V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant.
8.1A maximum.
Maximum 17.9mΩ, typical 14.0mΩ.
0.5V minimum to 1.1V maximum.