| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL630PBF is an N-Channel MOSFET employing metal-oxide semiconductor technology. It is designed for high-voltage, moderate-current switching applications and comes in a through-hole TO-220-3 (TO-220AB) package.
The device has a drain-to-source voltage rating of 200V and a continuous drain current rating of 9A at case temperature. Maximum on-resistance is 400mΩ when driven with a gate-to-source voltage of 5V at a drain current of 5.4A. The total gate charge is 40nC at 10V, and input capacitance is 1100pF at 25V. The maximum gate threshold voltage is 2V at 250µA, and the recommended drive voltage range is 4V to 5V.
Maximum power dissipation is 74W at case temperature, with an operating junction temperature range from -55°C to 150°C. The TO-220AB package supports easy heatsinking and through-hole PCB mounting. The part is listed as RoHS3 compliant.
The drain-source voltage (Vdss) is 200V.
The IRL630PBF is available in a TO-220-3 package with a TO-220AB supplier device package, using through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant.
The continuous drain current (Id) is 9A at case temperature.
The maximum Rds(on) is 400mΩ at Id = 5.4A and Vgs = 5V.
The maximum gate threshold voltage (Vgs(th)) is 2V at Id = 250µA.