| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL630A is an N-Channel enhancement-mode MOSFET designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 9A at 25°C case temperature. The device utilizes MOSFET (Metal Oxide) technology and offers a low on-resistance of 0.4Ω maximum at 4.5A gate drive. It is housed in a TO-220-3 through-hole package, suitable for easy mounting on heatsinks. The operating junction temperature range is -55°C to 150°C. Typical applications include power supplies, motor control, and DC-DC converters.
200V.
9A at 25°C case temperature.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
Maximum 2V at 250µA drain current.
0.335Ω at 4.5A, 5V gate drive.