| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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52 pcs
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52 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRL630 is a third-generation N-Channel Power MOSFET designed by Vishay Siliconix, suitable for commercial-industrial applications. It provides a balance of fast switching, rugged design, low on-resistance, and cost-effectiveness.
Key electrical specifications include a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 9A at 25°C. The on-state resistance (RDS(on)) is specified at 0.40 Ohms at VGS = 5V. The device features a logic-level gate drive and is rated for a maximum operating junction temperature of 150°C.
Packaged in the widely accepted TO-220AB through-hole package, the IRL630 is well-suited for power dissipation levels up to approximately 50W. Its low thermal resistance and package cost contribute to its broad industry acceptance. The MOSFET is also noted for its dynamic dV/dt rating, repetitive avalanche rating, and ease of paralleling, making it a versatile component for power management solutions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRL630 is 200V.
The continuous drain current (ID) for the IRL630 at 25°C is 9A.
The on-state resistance (RDS(on)) is 0.40 Ohms at a gate-source voltage of 5V.
The IRL630 MOSFET is supplied in a TO-220AB package.
The maximum operating junction and storage temperature for the IRL630 is 150°C.