| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,390 pcs
$3.05
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2390 pcs |
$3.05
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1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Infineon IRL6297SDTRPBF is a dual common-drain N-channel power MOSFET designed for battery charge/discharge and input power isolation applications. It combines HEXFET silicon technology with DirectFET packaging to achieve very low on-state resistance in a compact, surface-mount package.
Key electrical specifications include a maximum drain-to-source voltage of 20V, maximum gate-to-source voltage of ±12V, and continuous drain current of 15A at 25°C. The typical on-resistance is 3.8mΩ at Vgs=4.5V and 5.4mΩ at Vgs=2.5V. Gate charge characteristics include a total gate charge of 27nC typical, gate-to-drain charge of 9.5nC, and gate-to-source charge of 1.4nC.
The device is housed in a DirectFET Isometric SA package, which supports surface-mount assembly and provides dual-sided cooling for improved thermal performance. The package is compatible with standard PCB assembly processes when following application note AN-1035.
The maximum drain-to-source voltage is 20V.
The continuous drain current is 15A at 25°C.
The typical on-resistance is 3.8mΩ at Vgs=4.5V.
It is available in a DirectFET Isometric SA surface-mount package.
Yes, the datasheet claims RoHS compliance and halogen free status.