| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL620S is an N-Channel power MOSFET designed for high-efficiency switching applications. It offers a drain-source voltage rating of 200V and a continuous drain current of 5.2A at 25°C case temperature. The device features a maximum on-resistance of 800mOhm at Vgs=10V and Id=3.1A, enabling low conduction losses. With a logic-level gate drive (Vgs(th) max 2V), it can be driven directly from 5V logic sources. The gate charge is 16nC at Vgs=5V, supporting fast switching. The MOSFET is avalanche rated with single pulse avalanche energy of 125mJ and repetitive avalanche current of 5.2A. It is housed in a D2PAK (TO-263) surface-mount package, which provides excellent thermal performance with a maximum power dissipation of 50W at Tc=25°C. The device is suitable for applications requiring ruggedness and fast switching, such as DC-DC converters, motor control, and power management.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $2.05 | $2.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
5.2A at 25°C case temperature.
800mOhm max at Vgs=10V, Id=3.1A.
-55°C to 150°C junction temperature.
D2PAK (TO-263) surface-mount package.
RoHS3 compliant variant available (IRL620SPbF), but not confirmed for all variants.
Maximum 2V at Id=250µA.