| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The IRL620PBF is an N-Channel power MOSFET manufactured by Vishay Dale. It is designed for commercial and industrial applications requiring power dissipation up to 50W. The device features a drain-source voltage rating of 200V and a continuous drain current of 5.2A at 25°C case temperature, with a pulsed drain current capability of 21A.
The MOSFET has a maximum drain-source on-resistance of 800mΩ at a gate-source voltage of 5V and drain current of 3.1A. It supports logic-level gate drive with a maximum gate threshold voltage of 2V at 250µA drain current. The device offers fast switching performance with a maximum gate charge of 16nC at 5V gate-source voltage.
This component is housed in a TO-220AB package, which is widely used for power applications due to its low thermal resistance and cost-effectiveness. The package has a maximum junction-to-case thermal resistance of 2.5°C/W and a junction-to-ambient thermal resistance of 62°C/W. The operating junction temperature range is -55°C to 150°C.
The IRL620PBF is RoHS3 compliant and lead-free, making it suitable for environmentally conscious designs. It is designed for applications requiring ruggedized device performance, including repetitive avalanche capability and dynamic dV/dt rating.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 5.2A at Tc=25°C and 3.3A at Tc=100°C.
The operating junction temperature range is -55°C to 150°C.
Yes, the IRL620PBF is RoHS3 compliant and lead-free.
The IRL620PBF is available in a TO-220-3 package with TO-220AB supplier device package, through-hole mounting.
The maximum drain-source on-resistance is 800mΩ at Id=3.1A and Vgs=5V.
The maximum power dissipation is 50W at Tc=25°C.