| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,190 pcs
|
1190 pcs | On Request | 1 | On Request | On Request | 2001 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL620A is an N-Channel Power MOSFET manufactured by onsemi. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 5A at case temperature Tc. The device uses MOSFET (Metal Oxide) technology and requires a drive voltage of 5V for maximum Rds(on). The maximum drain-source on-resistance is 0.8Ω at 2.5A and 5V gate-source voltage. The gate-source threshold voltage is 2V at 250µA drain current. The maximum gate charge is 15nC at 5V, and input capacitance is 430pF at 25V drain-source voltage. The maximum power dissipation is 39W at case temperature. The operating junction temperature range is -55°C to 150°C. The device is housed in a TO-220-3 package with through-hole mounting, suitable for various power switching applications. The supplier device package is TO-220. The part is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified. The part is cross-referenced with Digi-Key part number 2156-IRL620A-ND.
| Qty | Low | High |
|---|---|---|
| 568+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction temperature).
TO-220-3 (through-hole).
RoHS3 compliant (unverified).
200V.
5A at case temperature.
5V.
0.8Ω at 2.5A and 5V gate-source voltage.