| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Infineon IRL60HS118 is an N-channel MOSFET belonging to the OptiMOS™ 5 family, utilizing an OptiMOS™ 5 Chip. It is designed for higher power density and switching frequency applications, offering system cost reductions and the ability to be driven directly from microcontrollers.
Key electrical specifications include a minimum drain-source voltage (Vds) of 60V and a maximum gate-source voltage (Vgs) of ±20V. The typical gate threshold voltage (Vgs(th)) is 1.7V. The on-resistance (RDS(on)) is a maximum of 17mΩ at 10V. Continuous drain current (ID) is rated up to 18.5A at 25°C case temperature.
This MOSFET is housed in a PQFN 2mm x 2mm package, supplied on tape and reel with a standard quantity of 4000 units. Its benefits include enabling higher power density designs and higher switching frequencies.
Target applications for the IRL60HS118 include wireless charging, adapters, and telecom systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.34 | $1.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
18.5A at Tc=25°C (silicon limited).
17mΩ maximum at Vgs=10V.
1.7V typical.
5.3nC typical.
PQFN 2x2mm.
-55 to +175°C.