IRL540A IRL540A is an N-channel MOSFET from On Semiconductor with 100V drain-source breakdown voltage and 28A continuous drain current. It is housed in a TO-220-3 through-hole package.
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IRL540A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
IRL540A is an N-channel MOSFET from On Semiconductor with 100V drain-source breakdown voltage and 28A continuous drain current. It is housed in a TO-220-3 through-hole package.
✓ Total Stock: 2 pcs
$ Price Range: $1.02

IRL540A Available from 1 distributor

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IRL540A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRL540A Description

Short technical summary and product information.

The IRL540A is an N-channel power MOSFET manufactured by On Semiconductor (originally Fairchild Semiconductor). It features a drain-source breakdown voltage of 100V (minimum) and a continuous drain current of 28A at 25°C case temperature. The on-resistance is typically 0.046Ω and maximum 0.058Ω at VGS=5V and ID=14A. The device offers a gate threshold voltage range of 1.0V to 4.0V, making it suitable for logic-level drive applications.

 

Electrical characteristics include a typical input capacitance of 1580 pF, output capacitance of 390 pF, and reverse transfer capacitance of 180 pF at VDS=25V. Total gate charge is 54 nC at VGS=5V, with a gate-drain (Miller) charge of 38 nC. The device is rated for a maximum power dissipation of 121W at 25°C case temperature. Thermal resistance junction-to-case is 0.81°C/W.

 

The IRL540A is designed for rugged applications with avalanche rugged technology and lower leakage current (10 µA max at VDS=100V). It is packaged in a TO-220-3 through-hole package with three terminals (gate, drain, source). The operating junction temperature range is -55°C to 175°C.

IRL540A Quick Information

Product Type: MOSFET
Canonical Name: IRL540A N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRL540A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRL540A Estimated Pricing

Qty Low High
293+ $1.02 $1.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRL540A Features

  • N-channel MOSFET with 100V drain-source breakdown voltage.
  • Continuous drain current rating of 28A at 25°C.
  • Low on-resistance: 0.046Ω typical at 5V gate drive.
  • Avalanche rugged and low leakage current.
  • TO-220-3 through-hole package for easy mounting.

IRL540A Applications

  • Ideal for power management and switching applications.
  • Used in DC-DC converters and motor control circuits.
  • Suitable for load switching and battery protection.
  • Useful in power supply and motor drive circuits.
  • Can be used in automotive and industrial systems.

IRL540A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the IRL540A?

The IRL540A is available in a TO-220-3 through-hole package.

What is the operating temperature range of the IRL540A?

The operating junction temperature range is -55°C to 175°C.

Is the IRL540A RoHS compliant?

The IRL540A is listed as RoHS compliant, but this status is unverified.

What is the gate threshold voltage of the IRL540A?

The gate threshold voltage (Vgs(th)) ranges from 1.0V to 4.0V, with typical 2.0V at ID=250µA.

What is the drain-source on-resistance of the IRL540A?

The on-resistance is typically 0.046Ω and maximum 0.058Ω at VGS=5V and ID=14A.

What is the maximum continuous drain current of the IRL540A?

The continuous drain current is 28A at TC=25°C.

What is the drain-source breakdown voltage of the IRL540A?

The minimum drain-source breakdown voltage is 100V at VGS=0V, ID=250µA.

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