| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58 pcs
|
58 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL530NSTRLPBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications. The device features a drain-source breakdown voltage of 100V and can handle a continuous drain current of 17A at case temperature. On-resistance is specified as 100 milliohms maximum at a gate drive of 10V and 9A drain current. Gate threshold voltage is 2V maximum at 250 microamps. The MOSFET supports gate drive voltages of 4V and 10V for optimized on-resistance. Input capacitance is 800 picofarads at 25V drain-source and gate charge is 34 nanocoulombs at 5V, indicating moderate switching performance. Maximum power dissipation is 3.8W at ambient and 79W at case temperature. The device operates over a junction temperature range of -55°C to 175°C. It is offered in a surface-mount D2PAK package (TO-263-3, D²Pak) with gull wing terminations, suitable for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.90 | $1.90 |
| 10+ | $1.23 | $1.23 |
| 100+ | $0.83 | $0.83 |
| 500+ | $0.65 | $0.65 |
| 800+ | $0.61 | $0.61 |
| 4,800+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
Maximum continuous drain current is 17A at case temperature.
Maximum on-resistance is 100 milliohms at Vgs=10V and Id=9A.
The device is offered in a surface-mount D2PAK package (TO-263-3, D²Pak).
The junction temperature range is -55°C to 175°C.