| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL510PBF is an N-Channel enhancement-mode MOSFET designed for high efficiency switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 5.6A at case temperature. The device has a low on-resistance of 540mOhm maximum at 3.4A and 5V gate drive. With a gate charge of 6.1nC and input capacitance of 250pF, it is suitable for moderate frequency switching. The gate threshold voltage is 2V maximum, allowing drive from 5V logic levels. Maximum power dissipation is 43W at case temperature.
The MOSFET is offered in the industry-standard TO-220-3 through-hole package (TO-220AB) and has an operating junction temperature range of -55°C to 175°C. It is listed as RoHS3 compliant, REACH unaffected, and MSL 1 (unverified). This device is suitable for power supplies, DC-DC converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.85 | $1.85 |
| 10+ | $1.21 | $1.21 |
| 100+ | $0.97 | $0.97 |
| 500+ | $0.81 | $0.81 |
| 1,000+ | $0.73 | $0.73 |
| 2,000+ | $0.67 | $0.67 |
| 5,000+ | $0.58 | $0.58 |
| 10,000+ | $0.57 | $0.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220-3 (TO-220AB).
-55°C to 175°C (junction).
According to the database, it is listed as RoHS3 compliant, but this has not been verified.
5.6A at case temperature.
540mOhm maximum at 3.4A drain current and 5V gate drive.
2V maximum at 250µA drain current.