| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IRL40SC228 is a StrongIRFET N-Channel power MOSFET designed for high-current switching applications. It features a drain-source voltage of 40V and a continuous drain current of 557A (silicon limited) at 25°C case temperature. The device achieves a maximum on-resistance of 0.65mOhm at a gate drive of 10V.
This MOSFET provides a gate threshold voltage of 2.4V maximum and requires drive voltages of 4.5V or 10V for optimal Rds(on). With a maximum gate charge of 307nC and input capacitance of 19680pF, it is suitable for high-frequency power conversion circuits.
The IRL40SC228 is offered in a TO-263-7 (D2PAK-7) surface-mount package with six leads plus a tab. It supports an operating junction temperature range of -55°C to +175°C and a maximum power dissipation of 416W.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.74 | $5.74 |
| 10+ | $3.82 | $3.82 |
| 100+ | $2.74 | $2.74 |
| 500+ | $2.30 | $2.30 |
| 800+ | $2.30 | $2.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
557 A at case temperature 25°C (silicon limited); package limited to 360 A.
Maximum 0.65 mOhm at 100 A drain current and 10 V gate-source voltage.
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB (surface mount).
-55°C to +175°C (junction temperature).
RoHS3 compliant (unverified from source document).