| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL3803S is an N-Channel Enhancement-Mode Power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). It is designed for high-efficiency power management applications requiring low on-resistance and high current capability.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 140A at case temperature (Tc). The maximum drain-to-source on-resistance (Rds(on)) is 6 mOhm at Vgs = 10V and Id = 71A, and 4.5V gate drive is supported for low-voltage logic-level operation. The gate threshold voltage is 1V max at Id = 250 µA. Maximum gate charge is 140 nC at Vgs = 4.5V, and input capacitance is 5000 pF at Vds = 25V.
The device is offered in a TO-263-3 (D2Pak) surface mount package, with an operating junction temperature range from -55°C to 175°C. Maximum power dissipation is 3.8W at ambient temperature and 200W at case temperature.
The operating junction temperature range is -55°C to 175°C.
It comes in a TO-263-3 (D2Pak) surface mount package.
The part is listed as RoHS3 compliant, but this information is unverified.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) at case temperature (Tc) is 140A.