| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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165 pcs
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165 pcs | On Request | 1 | On Request | On Request | 446 | On Request | On Request |
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The IRL3716PBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 180A at 25°C case temperature. The device offers an ultra-low typical on-resistance of 4mOhm at Vgs=10V, enabling high current handling with minimal conduction losses.
This MOSFET is built with advanced HEXFET technology and is characterized for avalanche operation, with a single pulse avalanche energy rating of 640mJ. It includes a body diode with fast reverse recovery time of 180ns typical, making it suitable for synchronous rectification in isolated DC-DC converters and high-frequency buck converters.
The IRL3716PBF is housed in a standard TO-220AB through-hole package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.72°C/W. It operates over a junction temperature range of -55°C to 175°C. The device is lead-free and RoHS compliant, though compliance status is unverified.
20V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C junction temperature.
The part is listed as RoHS3 Compliant, but this status is unverified.
Minimum 1V, maximum 3V at Id=250µA.
180A at Tc=25°C, 130A at Tc=100°C.