| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The Infineon IRL3713STRLPBF is a high-performance N-Channel MOSFET designed for demanding applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 260A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 3mOhm at 38A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The MOSFET has a maximum gate charge (Qg) of 110nC at 4.5V and a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is rated at a maximum of 5890pF at 15V.
With a maximum power dissipation of 330W and an operating temperature range of -55°C to 175°C, this MOSFET is built for robust performance. It is housed in a surface-mount D2PAK package (TO-263-3, D²Pak), suitable for various electronic designs.
This component is part of Infineon's HEXFET® series, known for their reliability and efficiency in power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
260A.
D2PAK (TO-263-3, D²Pak).
-55°C to 175°C (junction).
3mOhm at 38A drain current and 10V gate drive.
110nC at 4.5V gate-source voltage.
330W.