| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL3705NPBF is an N-Channel power MOSFET from Infineon Technologies, built on advanced HEXFET technology. It is designed for high-efficiency power switching in a wide range of commercial and industrial applications. The device is rated for a drain-to-source voltage of 55V and a continuous drain current of 89A at Tc=25°C (63A at 100°C) with a maximum pulsed drain current of 310A.
At Vgs=10V and Id=46A, the maximum static drain-to-source on-resistance is 10mΩ. The device also specifies 12mΩ at 5V and 18mΩ at 4V, allowing a logic-level gate drive. The gate threshold voltage ranges from 1.0V to 2.0V, and the maximum gate-to-source voltage is ±16V. With an input capacitance of 3600pF and gate charge of 98nC, the MOSFET is well suited for fast switching applications. The part also provides single-pulse avalanche energy of 340mJ, repetitive avalanche energy of 17mJ, and peak diode recovery dv/dt of 5.0V/ns.
The device is housed in the TO-220-3 (TO-220AB) through-hole package, which is popular for power applications around 50W. Thermal resistance is 0.90°C/W junction-to-case, 62°C/W junction-to-ambient, and 0.50°C/W case-to-sink with a greased flat surface. Maximum power dissipation is 170W at Tc=25°C, and the junction temperature range spans -55°C to 175°C. The product is RoHS compliant and lead-free per existing data.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
| 10+ | $1.46 | $1.46 |
| 100+ | $0.99 | $0.99 |
| 500+ | $0.88 | $0.88 |
| 5,000+ | $0.66 | $0.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 55 V.
It is available in the TO-220-3 package (supplier package TO-220AB), with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
Existing product data lists it as RoHS3 compliant, but this status is not independently verified (low confidence).
Continuous drain current is 89A at Tc=25°C with Vgs=10V, and 63A at Tc=100°C.
Maximum Rds(on) is 10mΩ at Vgs=10V, Id=46A; 12mΩ at 5V; and 18mΩ at 4V.
Yes, the gate threshold voltage ranges from 1.0V to 2.0V, enabling logic-level drive, and the gate-to-source voltage is rated at ±16V.