| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
198 pcs
|
198 pcs | On Request | 1 | On Request | On Request | 97 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRL3303D1S is an N-Channel power MOSFET from Infineon Technologies, designed for efficient power management. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 38A at 25°C case temperature. The on-resistance is a maximum of 26 mOhm at 20A drain current and 10V gate drive, and it also supports logic-level gate drive voltages of 4.5V and 10V.
The device offers a total gate charge of 26 nC at 4.5V and an input capacitance of 870 pF at 25V drain-source voltage, enabling fast switching. It is housed in a surface-mount D2PAK package (TO-263-3) and operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 68W at 25°C case temperature.
This MOSFET is suitable for a variety of applications including power supplies, DC-DC converters, and motor control circuits. Its logic-level gate drive capability allows direct interface with low-voltage control circuits.
30V
D2PAK (TO-263-3)
-55°C to 175°C (junction)
RoHS3 compliant (unverified)
38A at 25°C case temperature
26 mOhm at 20A, 10V gate drive
26 nC at 4.5V gate source