IRL3103D1S The IRL3103D1S is an N-Channel MOSFET from Infineon Technologies, rated for 30V drain-source voltage and 64A continuous drain current. It comes in a D2PAK surface-mount package.
Mfr Part #:

IRL3103D1S

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRL3103D1S is an N-Channel MOSFET from Infineon Technologies, rated for 30V drain-source voltage and 64A continuous drain current. It comes in a D2PAK surface-mount package.
✓ Total Stock: 140 pcs
$ Price Range: $1.62

IRL3103D1S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
140 pcs
140 pcs On Request 1 On Request On Request 2001 On Request On Request

IRL3103D1S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRL3103D1S Description

Short technical summary and product information.

The IRL3103D1S is an N-Channel MOSFET from Infineon Technologies, part of the FETKY family that co-packages a HEXFET power MOSFET with a Schottky diode. This device is designed for high-efficiency switching regulator applications, offering a low on-resistance of 14 mΩ at Vgs=10V and a logic-level gate drive capability.

 

Key electrical specifications include a drain-to-source breakdown voltage of 30V, continuous drain current of 64A at Tc=25°C, and pulsed drain current up to 220A. The gate threshold voltage is 1V at Id=250µA, and the total gate charge is 43 nC at Vgs=4.5V, enabling efficient switching.

 

The device is housed in a TO-263-3 (D2PAK) surface-mount package, suitable for high-current applications due to its low internal connection resistance. It can dissipate up to 89W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C.

IRL3103D1S Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: N-Channel MOSFET, 30V, 64A, D2PAK
Subcategory: Single N-Channel MOSFET

IRL3103D1S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRL3103D1S Estimated Pricing

Qty Low High
250+ $1.62 $1.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRL3103D1S Features

  • N-Channel MOSFET with 30V breakdown voltage.
  • 64A continuous drain current at 25°C.
  • Low on-resistance of 14 mΩ at 10V.
  • Logic-level gate drive for easy control.
  • Surface-mount D2PAK package for high power.

IRL3103D1S Applications

  • Ideal for synchronous regulator applications.
  • Used in high-current switching power supplies.
  • Suitable for DC-DC converter circuits.
  • Perfect for low-voltage motor control.

IRL3103D1S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRL3103D1S?

The drain-to-source breakdown voltage is 30V.

What is the maximum continuous drain current at 25°C?

The continuous drain current is 64A at Tc=25°C with Vgs=10V.

What is the on-resistance of the IRL3103D1S?

The on-resistance is 14 mΩ maximum at Vgs=10V and Id=34A, and 19 mΩ maximum at Vgs=4.5V and Id=28A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the IRL3103D1S available in?

The device is available in a TO-263-3 (D2PAK) surface-mount package.

Is the IRL3103D1S RoHS compliant?

RoHS compliance is reported as RoHS3 compliant, but this is unverified and conflicting with distributor data.

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