| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 818 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL3102PBF is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies using advanced MOSFET technology. It is designed for high-efficiency power management applications requiring low on-resistance and fast switching.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 20V, a continuous drain current (Id) of 61A at Tc, and a maximum power dissipation of 89W at Tc. The device features a low on-resistance (Rds(on)) of 13 mOhm maximum at Vgs=7V and Id=37A. Gate threshold voltage (Vgs(th)) is 700mV maximum at Id=250µA, enabling logic-level gate drive. The input capacitance (Ciss) is 2500 pF at Vds=15V.
The IRL3102PBF is supplied in a TO-220AB package with through-hole mounting, suitable for PCB assembly. The operating junction temperature range is -55°C to +150°C.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 61A at Tc.
The maximum on-resistance (Rds(on)) is 13 mOhm at Vgs=7V and Id=37A.
The IRL3102PBF is housed in a TO-220AB through-hole package.
The operating junction temperature range is -55°C to +150°C.
The maximum gate threshold voltage (Vgs(th)) is 700mV at Id=250µA.
The input capacitance (Ciss) is 2500 pF at Vds=15V.