BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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199 pcs
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199 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The IRL2910STRLPBF is an N-Channel MOSFET manufactured by Infineon. This component is designed for surface mount applications and comes in a D2PAK package. It offers a drain-source breakdown voltage of 100V and a continuous drain current of 55A at a case temperature (Tc).
The MOSFET has an on-resistance of 260 mOhms and a gate-source voltage rating of 16V. The power dissipation is rated at 3.8W at ambient temperature (Ta) and 200W at case temperature (Tc). The gate charge is 93.3 nC.
Key electrical characteristics include a 100V drain-source breakdown voltage and a 55A continuous drain current. The device is suitable for various power switching and amplification applications where a robust N-Channel MOSFET is required. Its surface mount D2PAK package facilitates integration into compact electronic designs.
Mechanical specifications include dimensions of 6.5mm in length, 6.22mm in width, and 2.3mm in height. The component is manufactured using Silicon (Si) technology and is configured as a single channel device. The factory pack quantity is 800 units.
The continuous drain current is 55A at the case temperature.
The drain-source breakdown voltage is 100V.
The drain-source on-resistance is 260 mOhms.
The gate-source voltage rating is 16V.
The power dissipation is 3.8W at ambient temperature and 200W at case temperature.
The IRL2910STRLPBF is an N-Channel MOSFET.
The IRL2910STRLPBF is supplied in a D2PAK package.