BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,444 pcs
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6444 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The IRL2910STRLPBF is an N-Channel MOSFET manufactured by Infineon. It features a drain-source breakdown voltage of 100V and a continuous drain current capability of 55A at the case temperature.
This MOSFET has a low drain-source on-resistance of 260 mOhms, making it suitable for power switching applications. The gate-source voltage rating is 16V, and the gate charge is 93.3 nC.
With a power dissipation of 3.8W at ambient temperature and 200W at the case temperature, the IRL2910STRLPBF is designed for efficient operation. It is packaged in a D2PAK surface-mount case and supplied on a reel.
Key electrical characteristics include a 100V Vds, 55A Id, and 260mOhm Rds(on). The component is designed for surface mounting, utilizing the D2PAK package for thermal management and board space efficiency.
The drain-source breakdown voltage is 100V.
The continuous drain current is 55A at the case temperature (Tc).
The package type is D2PAK (TO-263).
The drain-source on-resistance is 260 mOhms.
The gate-source voltage rating is 16V.
The total gate charge is 93.3 nC.
The power dissipation is 200W at the case temperature (Tc) and 3.8W at ambient temperature (Ta).