| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge |
The Infineon IRL2910SPBF is a HEXFET Power MOSFET designed for various electronic applications. This component offers specific electrical characteristics, including typical capacitance values such as Coss of 3000pF, Ciss of 2000pF, and Crss of 1000pF, all measured at VGS = 0V and f = 1MHz. The total gate charge (Qg) is typically 200nC under specific test conditions (ID = 29A, VDS = 80V).
This MOSFET also exhibits a typical source-to-drain voltage (VSD) of 2V at 1000A. While detailed specifications for drain-to-source voltage, continuous drain current, and Rds(on) are not explicitly provided in the available snippets, the part belongs to the HEXFET Power MOSFET family, indicating its suitability for power switching and amplification tasks.
Further details regarding its package, mounting type, and operating temperature would typically be found in the full datasheet. The IRL2910SPBF is manufactured by Infineon, a recognized leader in semiconductor solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRL2910SPBF has typical capacitance values of Coss at 3000pF, Ciss at 2000pF, and Crss at 1000pF, all measured at VGS = 0V and f = 1MHz.
The typical total gate charge (Qg) for the IRL2910SPBF is 200nC.
The typical source-to-drain voltage (VSD) for the IRL2910SPBF is 2V at 1000A.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.