IRL2910PBF IRL2910PBF is an N-Channel MOSFET from Infineon Technologies. It features a 100V drain-source voltage, 55A drain current, and low on-resistance of 26mOhm.
Mfr Part #:

IRL2910PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRL2910PBF is an N-Channel MOSFET from Infineon Technologies. It features a 100V drain-source voltage, 55A drain current, and low on-resistance of 26mOhm.
✓ Total Stock: 10,000 pcs
$ Price Range: $1.08

IRL2910PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request

IRL2910PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRL2910PBF Description

Short technical summary and product information.

The IRL2910PBF is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications. The device offers a maximum drain-source voltage of 100V and a continuous drain current of 55A at case temperature Tc. The typical on-state resistance is 26mOhm at Vgs=10V and Id=29A, ensuring low conduction losses.

 

This MOSFET features a gate threshold voltage of 2V at Id=250µA and can be driven with logic-level voltages (4V to 10V). The input capacitance is 3700pF at Vds=25V, and the total gate charge is 140nC at Vgs=5V, which influences switching performance. Maximum power dissipation is 200W at Tc, and the junction temperature range is -55°C to 175°C.

 

The device is housed in a TO-220-3 package with a TO-220AB supplier package, suitable for through-hole mounting. This package provides good thermal performance and is widely used in power electronics. The IRL2910PBF is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

IRL2910PBF Quick Information

Product Type: MOSFET
Canonical Name: IRL2910PBF N-Channel MOSFET 100V 55A TO-220AB
Subcategory: N-Channel MOSFET

IRL2910PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRL2910PBF Estimated Pricing

Qty Low High
1,000+ $1.08 $1.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRL2910PBF Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 55A.
  • Low on-resistance of 26mOhm at 10V gate drive.
  • Logic-level gate drive capability (4V to 10V).
  • TO-220AB through-hole package for easy mounting.

IRL2910PBF Applications

  • Suitable for power supply switching circuits.
  • Used in DC-DC converters and motor drives.
  • Ideal for high-efficiency power management systems.
  • Applicable in automotive and industrial electronics.

IRL2910PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRL2910PBF?

The maximum drain-source voltage (Vdss) is 100V.

What is the maximum drain current?

The maximum drain current is 55A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 26mOhm at Id=29A and Vgs=10V.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

What package does the IRL2910PBF come in?

It comes in a TO-220-3 package (TO-220AB) for through-hole mounting.

Is the IRL2910PBF RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2V at Id=250µA.

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